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INTEGRATED CIRCUITS
DATA SHEET
TEA1095 Voice switched speakerphone IC
Product specification Supersedes data of 1996 Mar 22 File under Integrated Circuits, IC03 1997 Nov 25
Philips Semiconductors
Product specification
Voice switched speakerphone IC
FEATURES * External power supply with power-down function * Transmit channel with: - externally adjustable gain - transmit mute function * Receive channel with: - externally adjustable gain - logarithmic volume control via a linear potentiometer - receive mute function * Duplex controller consisting of: - signal envelope and noise envelope monitors for both channels with: externally adjustable sensitivity externally adjustable signal envelope time constant externally adjustable noise envelope time constant - decision logic with: externally adjustable switch-over timing externally adjustable idle mode timing externally adjustable dial tone detector in receive channel - voice switch control with: adjustable switching range constant sum of gain during switching constant sum of gain at different volume settings. ORDERING INFORMATION TYPE NUMBER TEA1095 TEA1095T TEA1095TS PACKAGE NAME DIP24 SO24 SSOP24 DESCRIPTION plastic dual in-line package; 24 leads (600 mil) plastic small outline package; 24 leads; body width 7.5 mm plastic shrink small outline package; 24 leads; body width 5.3 mm GENERAL DESCRIPTION APPLICATIONS
TEA1095
* Mains, battery or line-powered telephone sets * Cordless telephones * Answering machines * Fax machines * Hands-free car kits.
The TEA1095 is a bipolar circuit, that in conjunction with a member of the TEA106X, TEA111X families of transmission or TEA1096 transmission/listening-in circuits offers a hands-free function. It incorporates a transmit amplifier, a receiver channel amplifier and a duplex controller with signal and noise monitors on both channels.
VERSION SOT101-1 SOT137-1 SOT340-1
1997 Nov 25
2
Philips Semiconductors
Product specification
Voice switched speakerphone IC
TEA1095
QUICK REFERENCE DATA VBB = 5 V; VGND = 0 V; f = 1 kHz; Tamb = 25 C; MUTETX = LOW; MUTERX = LOW; PD = LOW; RVOL = 0 ; measured in test circuit of Fig.11; unless otherwise specified. SYMBOL VBB IBB Gvtx Gvtxr Gvrx Gvrxr SWRA SWRA Tamb PARAMETER supply voltage current consumption from pin VBB voltage gain from TXIN to TXOUT in transmit mode voltage gain adjustment with RGATX voltage gain from RXIN to RXOUT in receive mode voltage gain adjustment with RGARX switching range switching range adjustment operating ambient temperature with RSWR referenced to RSWR = 365 k VRXIN = 20 mV (RMS); RGARX = 16.5 k VTXIN = 1 mV (RMS); RGATX = 30.1 k CONDITIONS - - -15.5 - -20.5 - -40 -25 MIN. 2.9 TYP. - 2.7 15.5 - 6.5 - 40 - - MAX. 12.0 3.8 - +24.5 - +19.5 - +12 +75 UNIT V mA dB dB dB dB dB dB C
1997 Nov 25
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Philips Semiconductors
Product specification
Voice switched speakerphone IC
BLOCK DIAGRAM
TEA1095
handbook, full pagewidth
7V BB 13 PD 15 MUTETX
TEA1095
GND
6
TRANSMIT CHANNEL
VBB CTXIN
GATX
17
RGATX
18
TXIN
V
I
I
V
TXOUT TXGND
16 14 to transmission circuit
RMIC
RTSEN CTSEN
24
TSEN
DUPLEX CONTROLLER LOG
IDT Vref SWT
12
RIDT
BUFFER CTENV 23 TENV 13 mV CTNOI 22 19 CRNOI TNOI RNOI BUFFER LOGIC VOICE SWITCH BUFFER ATTENUATOR
11
CSWT
STAB
10
RSTAB
20 CRENV RRSEN CRSEN
RENV BUFFER
SWR 13 mV
9
RSWR
21
RSEN
LOG
Vdt
RGARX
4
GARX
2
5 to loudspeaker amplifier 1
RXOUT
V
I
I
V
RXIN
2
from transmission circuit
MUTERX VOLUME CONTROL VOL 8 RVOL
RECEIVE CHANNEL
MBG350
Fig.1 Block diagram.
1997 Nov 25
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Philips Semiconductors
Product specification
Voice switched speakerphone IC
PINNING SYMBOL MUTERX RXIN n.c. GARX RXOUT GND VBB VOL SWR STAB SWT IDT PD TXGND MUTETX TXOUT GATX TXIN RNOI RENV RSEN TNOI TENV TSEN PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 DESCRIPTION receiver channel mute input receiver amplifier input not connected receiver gain adjustment receiver amplifier output ground reference supply voltage input receiver volume adjustment switching range adjustment reference current adjustment switch-over timing adjustment idle mode timing adjustment power-down input ground reference for the transmit channel transmit channel mute input transmit amplifier output transmit gain adjustment transmit amplifier input receive noise envelope timing adjustment receive signal envelope timing adjustment receive signal envelope sensitivity adjustment transmit noise envelope timing adjustment transmit signal envelope timing adjustment transmit signal envelope sensitivity adjustment Fig.2 Pin configuration.
handbook, halfpage
TEA1095
MUTERX RXIN n.c. GARX RXOUT GND VBB VOL SWR
1 2 3 4 5 6
24 TSEN 23 TENV 22 TNOI 21 RSEN 20 RENV 19 RNOI
TEA1095
7 8 9 18 TXIN 17 GATX 16 TXOUT 15 MUTETX 14 TXGND 13 PD
MBG349
STAB 10 SWT 11 IDT 12
1997 Nov 25
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Philips Semiconductors
Product specification
Voice switched speakerphone IC
FUNCTIONAL DESCRIPTION The values given in the functional description are typical values except when otherwise specified. A principle diagram of the TEA1096 is shown on the left side of Fig.3. The TEA1096 is a transmission and listening-in circuit. It incorporates a receiving amplifier for the earpiece, a transmit amplifier for the microphone, a loudspeaker amplifier and a hybrid. For more details on the TEA1096 circuit (please refer to Data Handbook IC03). The right side of Fig.3 shows a principle diagram of the TEA1095, a hands-free add-on circuit with a transmit amplifier, a receiver amplifier and a duplex controller. As can be seen from Fig.3, a loop is formed via the sidetone network in the transmission circuit and the acoustic coupling between loudspeaker and microphone of the hands-free circuit. When this loop gain is greater than 1, howling is introduced. In a full duplex application, this would be the case. The loop-gain has to be much
TEA1095
lower than 1 and therefore has to be decreased to avoid howling. This is achieved by the duplex controller. The duplex controller of the TEA1095 detects which channel has the `largest' signal and then controls the gains of the transmit amplifier and the receiver amplifier such that the sum of the gains remains constant. As a result, the circuit can be in three stable modes: 1. Transmit mode (Tx mode): the gain of the transmit amplifier is at its maximum and the gain of the receiver amplifier is at its minimum. 2. Receive mode (Rx mode): the gain of the receiver amplifier is at its maximum and the gain of the transmit amplifier is at its minimum. 3. Idle mode: the gain of the amplifiers is halfway between their maximum and minimum value. The difference between the maximum gain and minimum gain is called the switching range.
handbook, full pagewidth
acoustic coupling
telephone line sidetone
HYBRID
DUPLEX CONTROL
TEA1096
TEA1095
MBG358
Fig.3 Hands-free telephone set principles.
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Philips Semiconductors
Product specification
Voice switched speakerphone IC
Supply: pins VBB, GND and PD The TEA1095 must be supplied with an external stabilized voltage source between pins VBB and GND. In idle mode, without any signal, the internal supply current is 2.7 mA at VBB = 5 V. To reduce current consumption during pulse dialling or register recall (flash), the TEA1095 is provided with a power-down (PD) input. When the voltage on PD is HIGH, the current consumption from VBB is 140 A. Transmit channel: pins TXIN, GATX, TXOUT, TXGND and MUTETX The TEA1095 has an asymmetrical transmit input (TXIN) with an input resistance of 20 k. The gain of the input stage varies according to the mode of the TEA1095. In the transmit mode, the gain is at its maximum; in the receive
TEA1095
mode, it is at its minimum and in the idle mode, it is halfway between maximum and minimum. Switch-over from one mode to the other is smooth and click-free. The output capability at pin TXOUT is 20 A (RMS). In the transmit mode, the overall gain of the transmit amplifier (from pin TXIN to TXOUT) can be adjusted from 0 dB to 40 dB to suit application specific requirements. The gain is proportional to the value of RGATX and equals 15.5 dB with RGATX = 30.1 k. A capacitor must be connected in parallel with RGATX to ensure stability of the transmit amplifier. Together with RGATX, it also provides a first-order low-pass filter. By applying a HIGH level on pin MUTETX, the transmit amplifier is muted and the TEA1095 is automatically forced into the receive mode.
handbook, full pagewidth
MUTETX VBB CTXIN
GATX
RGATX CGATX
TXIN
V
I
I
V
TXOUT
to transmission circuit
RMIC to envelope detector from voice switch to logic TXGND
MBG357
Fig.4 Transmit channel.
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Philips Semiconductors
Product specification
Voice switched speakerphone IC
Receive channel
TEA1095
handbook, full pagewidth
RGARX CGARX to loudspeaker amplifier
GARX
to/from voice switch
to envelope detector
RXOUT
V
I
I
V
RXIN
from transmission circuit
MUTERX RVOL
VOLUME CONTROL
VOL
MBG356
Fig.5 Receive channel.
RECEIVER AMPLIFIER: PINS RXIN, GARX, RXOUT AND MUTERX The TEA1095 has an asymmetrical input (RXIN) for the receiver amplifier with an input resistance of 20 k. The gain of the input stage varies according to the mode of the TEA1095. In the receive mode, the gain is at its maximum; in the transmit mode, it is at its minimum and in the idle mode, it is halfway between maximum and minimum. Switch-over from one mode to the other is smooth and click-free. In the receive mode, the overall gain of the receive amplifier can be adjusted from -14 dB to +26 dB to suit application specific requirements. The gain from RXIN to RXOUT is proportional to the value of RGARX and equals 6.5 dB with RGARX = 16.5 k. A capacitor connected in parallel with RGARX can be used to provide a first-order low-pass filter. By applying a HIGH level on pin MUTERX, the receiver amplifier is muted and the TEA1095 is automatically forced into the transmit mode.
VOLUME CONTROL: PIN VOL The receiver amplifier gain can be adjusted with the potentiometer RVOL. A linear potentiometer can be used to obtain logarithmic control of the gain of the receiver amplifier. Each 950 increase of RVOL results in a gain loss of 3 dB. The maximum gain reduction with the volume control is internally limited to the switching range. Duplex controller SIGNAL AND NOISE ENVELOPE DETECTORS: PINS TSEN, TENV, TNOI, RSEN, RENV AND RNOI The signal envelopes are used to monitor the signal level strength in both channels. The noise envelopes are used to monitor background noise in both channels. The signal and noise envelopes provide inputs for the decision logic. The signal and noise envelopes detectors are shown in Fig.6. For the transmit channel, the input signal at TXIN is 40 dB amplified to TSEN. For the receive channel, the input signal at RXIN is 0 dB amplified to RSEN. The signals from TSEN and RSEN are logarithmically compressed and buffered to TENV and RENV respectively. The sensitivity of the envelope detectors is set with RTSEN and RRSEN. 8
1997 Nov 25
Philips Semiconductors
Product specification
Voice switched speakerphone IC
The capacitors connected in series with the two resistors block any DC component and form a first order high-pass filter. In the basic application (see Fig.12), it is assumed that VTXIN = 1 mV (RMS) and VRXIN = 100 mV (RMS) nominal and both RTSEN and RRSEN have a value of 10 k. With the value of CTSEN and CRSEN at 100 nF, the cut-off frequency is at 160 Hz. The buffer amplifiers leading the compressed signals to TENV and RENV have a maximum source current of 120 A and a maximum sink current of 1 A. Together with the capacitors CTENV and CRENV, the timing of the signal envelope monitors can be set. In the basic application, the value of both capacitors is 470 nF. Because of the logarithmic compression, each 6 dB signal increase means 18 mV increase of the voltage on the envelopes TENV or RENV at room temperature. Thus, timings can be expressed in dB/ms. At room temperature, the 120 A sourced current corresponds to a maximum rise-slope of the signal envelope of 85 dB/ms. This is enough to track normal speech signals. The 1 A current sunk by TENV or
TEA1095
RENV corresponds to a maximum fall-slope of 0.7 dB/ms. This is enough for a smooth envelope and also eliminates the effect of echoes on switching behaviour. To determine the noise level, the signal on TENV and RENV are buffered to TNOI and RNOI. These buffers have a maximum source current of 1 A and a maximum sink current of 120 A. Together with the capacitors CTNOI and CRNOI, the timing can be set. In the basic application of Fig.12, the value of both capacitors is 4.7 F. At room temperature, the 1 A sourced current corresponds to a maximum rise-slope of the noise envelope of approximately 0.07 dB/ms. This is small enough to track background noise and not to be influenced by speech bursts. The 120 A current that is sunk corresponds to a maximum fall-slope of approximately 8.5 dB/ms. However, during the decrease of the signal envelope, the noise envelope tracks the signal envelope so it will never fall faster than approximately 0.7 dB/ms. The behaviour of the signal envelope and noise envelope monitors is illustrated in Fig.7.
handbook, full pagewidth
DUPLEX CONTROLLER to logic LOG from transmit amplifier from receiver amplifier LOG to logic
TSEN RTSEN CTSEN
TENV
TNOI
RSEN RRSEN
RENV
RNOI
CTENV
CTNOI
CRSEN
CRENV
CRNOI
MBG355
Fig.6 Signal and noise envelope detectors.
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Philips Semiconductors
Product specification
Voice switched speakerphone IC
TEA1095
handbook, full pagewidth
4 mV (RMS) 1 mV (RMS)
MBG354
INPUT SIGNAL
SIGNAL ENVELOPE A A: 85 dB/ms B: 0.7 dB/ms 36 mV B A B
NOISE ENVELOPE C B: 0.7 dB/ms C: 0.07 dB/ms 36 mV B C B
time
Fig.7 Signal and noise envelope waveforms.
handbook, full pagewidth
DUPLEX CONTROLLER Vref TENV TNOI ATTENUATOR 13 mV LOGIC
IDT
RIDT
SWT
CSWT x RENV RNOI 13 mV x 0 x 0 1 0 0 x 0 0 x 1 x 1 x 1 0 0 1 x x - 10 A + 10 A + 10 A
(note 1) Vdt MUTETX
MBG353
(1) When MUTETX = HIGH +10 A is forced. When MUTERX = HIGH -10 A is forced.
Fig.8 Decision logic.
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Philips Semiconductors
Product specification
Voice switched speakerphone IC
DECISION LOGIC: PINS IDT AND SWT The TEA1095 selects its mode of operation (transmit, receive or idle mode) by comparing the signal and the noise envelopes of both channels. This is executed by the decision logic. The resulting voltage on pin SWT is the input for the voice-switch. To facilitate the distinction between signal and noise, the signal is considered as speech when its envelope is more than 4.3 dB above the noise envelope. At room temperature, this is equal to a voltage difference VENV-NOI = 13 mV. This so called speech/noise threshold is implemented in both channels. The signal on TXIN contains both speech and the signal coming from the loudspeaker (acoustic coupling). When receiving, the contribution from the loudspeaker overrules the speech. As a result, the signal envelope on TENV is formed mainly by the loudspeaker signal. To correct this, an attenuator is connected between TENV and the TENV/RENV comparator. Its attenuation equals that applied to the transmit amplifier. When a dial tone is present on the line, without monitoring, the tone would be recognized as noise because it is a signal with a constant amplitude. This would cause the TEA1095 to go into the idle mode and the user of the set would hear the dial tone fade away. To prevent this, a dial tone detector is incorporated which, in standard application, does not consider the input signals at RXIN as noise when they have a level greater than 42 mV (RMS). This level is proportional to RRSEN. As can be seen from Fig.8, the output of the decision logic is a current source. The logic table gives the relationship between the inputs and the value of the current source. It can charge or discharge the capacitor CSWT with a current of 10 A (switch-over). If the current is zero, the voltage on SWT becomes equal to the voltage on IDT via the high ohmic resistor RIDT (idling). The resulting voltage difference between SWT and IDT determines the mode of the TEA1095 and can vary between -400 mV and +400 mV. Table 1 Modes of TEA1095 MODE transmit mode idle mode receive mode
TEA1095
The switch-over timing can be set with CSWT, the idle mode timing with CSWT and RIDT. In the basic application given in Fig.12, CSWT is chosen at 220 nF and RIDT at 2.2 M. This enables a switch-over time from transmit to receive mode or vice-versa of approximately 13 ms (580 mV swing on SWT). The switch-over time from idle mode to transmit mode or receive mode is approximately 4 ms (180 mV swing on SWT). The switch-over time from receive mode or transmit mode to idle mode is equal to 4 x RIDT CSWT and is approximately 2 s (idle mode time). The inputs MUTETX and MUTERX overrule the decision logic. When MUTETX goes HIGH, the capacitor CSWT is charged with 10 A resulting in the receive mode. When the voltage on pin MUTERX goes HIGH, the capacitor CSWT is discharged with 10 A resulting in the transmit mode. VOICE-SWITCH: PINS STAB AND SWR A diagram of the voice-switch is illustrated in Fig.9. With the voltage on SWT, the TEA1095 voice-switch regulates the gains of the transmit and the receive channel such that the sum of both is kept constant. In the transmit mode, the gain of the transmit amplifier is at its maximum and the gain of the receive amplifier is at its minimum. In the receive mode, the opposite applies. In the idle mode, both transmit and receive amplifier gains are halfway. The difference between maximum and minimum is the so called switching range. This range is determined by the ratio of RSWR and RSTAB and is adjustable between 0 and 52 dB. RSTAB should be equal to 3.65 k and sets an internally used reference current. In the basic application diagram given in Fig.12, RSWR is equal to 365 k which results in a switching range of 40 dB. The switch-over behaviour is illustrated in Fig.10. In the receive mode, the gain of the receive amplifier can be reduced using the volume control. Since the voice-switch keeps the sum of the gains constant, the gain of the transmit amplifier is increased at the same time (see dashed curves in Fig.10). In the transmit mode however, the volume control has no influence on the gain of the transmit amplifier or the gain of the receive amplifier. Consequently, the switching range is reduced when the volume is reduced. At maximum reduction of volume, the switching range becomes 0 dB.
VSWT - VIDT (mV) <-180 0 >180
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Philips Semiconductors
Product specification
Voice switched speakerphone IC
TEA1095
handbook, full pagewidth
DUPLEX CONTROLLER to transmit amplifier
from SWT
Gvtx + Gvrx = C VOICE SWITCH
STAB SWR
RSTAB RSWR
from volume control
to receive amplifier
MBG352
Where C = constant.
Fig.9 Voice switch.
handbook, halfpage
idle mode
MBG351
Tx mode Gvtx, Gvrx (10 dB/div)
Rx mode RVOL () 5700 3800 1900 0 0 1900 3800 5700
Gvtx
Gvrx -400 -200 0 +200 +400
VSWT - VIDT (mV)
Fig.10 Switch-over behaviour.
1997 Nov 25
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Philips Semiconductors
Product specification
Voice switched speakerphone IC
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Vn(max) VRIN(max) VBB(max) Tstg Tamb PARAMETER maximum voltage on all pins; except pins VBB and RXIN maximum voltage on pin RXIN maximum voltage on pin VBB IC storage temperature operating ambient temperature CONDITIONS MIN. VGND - 0.4 VGND - 1.2 VGND - 0.4 -40 -25 MAX.
TEA1095
UNIT V V V C C
VBB + 0.4 VBB + 0.4 12.0 +125 +75
THERMAL CHARACTERISTICS SYMBOL Rth j-a TEA1095 TEA1095T TEA1095TS PARAMETER thermal resistance from junction to ambient in free air 50 75 104 K/W K/W K/W VALUE UNIT
CHARACTERISTICS VBB = 5 V; VGND = 0 V; f = 1 kHz; Tamb = 25 C; MUTETX = LOW; MUTERX = LOW; PD = LOW; RVOL = 0 ; measured in test circuit of Fig.11; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply (VBB, PD and GND) VBB IBB VIL VIH IPD IBB(PD) supply voltage current consumption from pin VBB LOW level input voltage HIGH level input voltage power-down input current current consumption from pin VBB in power-down mode PD = HIGH PD = HIGH 2.9 - - 2.7 12.0 3.8 V mA
POWER-DOWN INPUT PD VGND - 0.4 - 1.5 - - - 2.5 140 0.3 VBB + 0.4 5 190 V V A A
Transmit channel (TXIN, GATX, TXOUT, MUTETX and TXGND) TRANSMIT AMPLIFIER Zi Gvtx Gvtxr GvtxT input impedance between pins TXIN and TXGND voltage gain from TXIN to TXOUT VTXIN = 1 mV (RMS); in transmit mode RGATX = 30.1 k voltage gain adjustment with RGATX voltage gain variation with temperature referenced to 25 C VTXIN = 1 mV (RMS); Tamb = -25 to +75 C 17 - -15.5 - 20 15.5 - 0.3 23 - +24.5 - k dB dB dB
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Philips Semiconductors
Product specification
Voice switched speakerphone IC
TEA1095
SYMBOL Gvtxf Vnotx
PARAMETER voltage gain variation with frequency referenced to 1 kHz noise output voltage at pin TXOUT
CONDITIONS VTXIN = 1 mV (RMS); f = 300 to 3400 Hz pin TXIN connected to TXGND through 200 in series with 10 F; psophometrically weighted (P53 curve) - -
MIN.
TYP. 0.3 -100 - -
MAX.
UNIT dB dBmp
TRANSMIT MUTE INPUT MUTETX VIL VIH IMUTETX Gvtxm LOW level input voltage HIGH level input voltage input current voltage gain reduction with MUTETX active MUTETX = HIGH MUTETX = HIGH VGND - 0.4 - 1.5 - - - 2.5 80 0.3 VBB + 0.4 5 - V V A dB
Receive channel (RXIN, GARX, RXOUT and MUTERX) RECEIVE AMPLIFIER Zi Gvrx Gvrxr GvrxT Gvrxf Vnorx(rms) input impedance between pins RXIN and GND voltage gain from RXIN to RXOUT in receive mode voltage gain adjustment with RGARX voltage gain variation with temperature referenced to 25 C voltage gain variation with frequency referenced to 1 kHz noise output voltage at pin RXOUT (RMS value) VRXIN = 20 mV (RMS); Tamb = -25 to +75 C VRXIN = 20 mV (RMS); fi = 300 to 3400 Hz input RXIN short-circuited through 200 in series with 10 F; psophometrically weighted (P53 curve) when total attenuation does not exceed the switching range VRXIN = 20 mV (RMS); RGARX = 16.5 k 17 - -20.5 - - - 20 6.5 - 0.3 0.3 20 23 - +19.5 - - - k dB dB dB dB V
Gvrxv
voltage gain variation referenced to RVOL = 950
-
3
-
dB
RECEIVE MUTE INPUT MUTERX VIL VIH IMUTERX LOW level input voltage HIGH level input voltage input current MUTERX = HIGH VGND - 0.4 - 1.5 - - 2.5 0.3 VBB + 0.4 5 V V A
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Philips Semiconductors
Product specification
Voice switched speakerphone IC
TEA1095
SYMBOL Gvrxm
PARAMETER gain reduction with MUTERX active
CONDITIONS MUTERX = HIGH -
MIN.
TYP. 80 -
MAX.
UNIT dB
Envelope and noise detectors (TSEN, TENV, TNOI, RSEN, RENV and RNOI) PREAMPLIFIERS Gv(TSEN) Gv(RSEN) voltage gain from TXIN to TSEN voltage gain between RXIN to RSEN ITSEN = 0.8 to 160 A - - 40 0 - - dB dB
LOGARITHMIC COMPRESSOR AND SENSITIVITY ADJUSTMENT det(TSEN) sensitivity detection on pin TSEN; voltage change on pin TENV when doubling the current from TSEN - 18 - mV
det(RSEN)
sensitivity detection on pin RSEN; IRSEN = 0.8 to 160 A voltage change on pin RENV when doubling the current from RSEN
-
18
-
mV
SIGNAL ENVELOPE DETECTORS Isource(ENV) Isink(ENV) VENV maximum current sourced from pin TENV or RENV maximum current sunk by pin TENV or RENV voltage difference between pins RENV and TENV when 10 A is sourced from both RSEN and TSEN; envelope detectors tracking; note 1 - 0.75 - 120 1 3 - 1.25 - A A mV
NOISE ENVELOPE DETECTORS Isource(NOI) Isink(NOI) VNOI maximum current sourced from pins TNOI or RNOI maximum current sunk by pins TNOI or RNOI voltage difference between pins RNOI and TNOI when 2 A is sourced from both RSEN and TSEN; noise detectors tracking; note 1 0.75 - - 1 120 3 1.25 - - A A mV
DIAL TONE DETECTOR VRINDT(rms) threshold level at pin RXIN (RMS value) - 42 - mV
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Philips Semiconductors
Product specification
Voice switched speakerphone IC
TEA1095
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Decision logic (IDT and SWT) SIGNAL RECOGNITION VSrx(th) threshold voltage between pins RENV and RNOI to switch-over from receive to idle mode threshold voltage between pins TENV and TNOI to switch-over from transmit to idle mode VRXIN < VRINDT; note 2 - 13 - mV
VStx(th)
note 2
-
13
-
mV
SWITCH-OVER Isource(SWT) Isink(SWT) Iidle(SWT) current sourced from pin SWT when switching to receive mode current sunk by pin SWT when switching to transmit mode current sourced from pin SWT in idle mode 7.5 7.5 - 10 10 0 12.5 12.5 - A A A
Voice switch (STAB and SWR) SWRA SWRA Gv switching range switching range adjustment voltage gain variation from transmit mode to idle mode on both channels gain tracking (Gvtx + Gvrx) during switching, referenced to idle mode with RSWR referenced to RSWR = 365 k - -40 - 40 - 20 - +12 - dB dB dB
Gtr Notes
-
0.5
-
dB
1. Corresponds to 1 dB tracking. 2. Corresponds to 4.3 dB noise/speech recognition level.
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Product specification
TEA1095
Fig.11 Test circuit.
handbook, full pagewidth
1997 Nov 25
220 nF CSWT 2.2 M RIDT RSTAB RSWR SWR 9 7 VBB 5.0 V CVBB SWT 11 STAB 10 10 F MUTETX 15 IDT 12 3.65 k 365 k
Philips Semiconductors
TEST AND APPLICATION INFORMATION
TXOUT
16
RGATX 30.1 k 13 220 nF CTXIN 4 GARX CGARX 16.5 k 5 20 RENV RTSEN 10 k CRENV 470 nF 4.7 F 100 nF 470 nF CRNOI CTSEN CTENV CTNOI 4.7 F RVOL RNOI TSEN TENV TNOI 19 24 23 22 1 MUTERX 8 VOL RXOUT PD
CGATX
Voice switched speakerphone IC
GATX
17
CRXIN
RXIN
2 18
TEA1095
TXIN
220 nF
17
TXGND
14
RGARX
GND
6
21
RSEN
RRSEN
10 k
CRSEN
100 nF
MBG359
handbook, full pagewidth
1997 Nov 25
from microcontroller RIDT 365 k SWR 9 TXIN CTXIN 100 nF RTXIN 2.2 k 2.2 M PD 13 1 CRXIN RXIN 2 18 100 nF MUTETX 15 MUTERX IDT 12 SWT 11 STAB 10 RSTAB 3.65 k RSWR CSWT 220 nF
Philips Semiconductors
R1 620
VCC
LN
QR +
Voice switched speakerphone IC
MIC - TXOUT 16 7 VBB n.c. GARX 4 TXGND 14 CGATX RGATX GATX 17 30.1 k 3
C7
VVBB
line
C1
100 nF
100 F
TEA106X
TEA1095
+5 V CVBB RGARX 16.5 k CGARX RXOUT 100 nF 10 F
18
GND 6 21 RSEN RRSEN CRSEN CRENV 100 nF 470 nF 4.7 F CRNOI 10 k 100 nF 10 k CTSEN RENV RNOI TSEN RTSEN 20 19 24 23 TENV 22 TNOI 8 CTENV 470 nF CTNOI 4.7 F
MIC +
C8
100 nF
5 VOL
CRXOUT LOUDSPEAKER AMPLIFIER RVOL CLSP LSP
VEE
SLPE
R9 20
MBG360
Product specification
TEA1095
Fig.12 Basic application diagram.
SWITCH MODE S1 Hands-free Handset Handset plus listening-in OPEN CLOSED OPEN S2 OPEN CLOSED CLOSED S3 TXOUT HSMIC HSMIC
handbook, full pagewidth
1997 Nov 25
RDD 390 S1 tip S2 S4 + S3 MUTET DP MICROCONTROLLER DTMF ring CVDD 100 F
Philips Semiconductors
Voice switched speakerphone IC
470 F RSLPE 20 SLPE LN VBB R2 VDD MICP 100 nF S3 TXOUT CMICP HSMIC MICM DTMF 100 nF CMICM QRP CQRP 10 F QLS GND 6 5 C1 R4 CRXIN 100 nF TXGND 14 8 VOL RVOL RXIN 2 R3 100 TXIN nF 16 7 VBB R1 CVBB 100 F MUTET CHSMIC 15 MUTETX 1 MUTERX PD 13 CHFTXIN 100 F R6 from microcontroller
HFTXIN
R7
TEA1096
TEA1095
18 CTXIN
RXOUT 100 nF CRXOUT
19
interrupter
VEE
R5 DLL/ DIL LSI CQLS 47 F HSQRP
S1
CDLL 470 nF HFQLS
S2
S4
MBG361
MUTET S4 LOW Product specification
OPEN OPEN CLOSED
TEA1095
DON'T CARE HIGH
Fig.13 Application example.
Philips Semiconductors
Product specification
Voice switched speakerphone IC
PACKAGE OUTLINES DIP24: plastic dual in-line package; 24 leads (600 mil)
TEA1095
SOT101-1
seating plane
D
ME
A2
A
L
A1 c Z e b1 b 24 13 MH wM (e 1)
pin 1 index E
1
12
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 5.1 0.20 A1 min. 0.51 0.020 A2 max. 4.0 0.16 b 1.7 1.3 0.066 0.051 b1 0.53 0.38 0.021 0.015 c 0.32 0.23 0.013 0.009 D (1) 32.0 31.4 1.26 1.24 E (1) 14.1 13.7 0.56 0.54 e 2.54 0.10 e1 15.24 0.60 L 3.9 3.4 0.15 0.13 ME 15.80 15.24 0.62 0.60 MH 17.15 15.90 0.68 0.63 w 0.25 0.01 Z (1) max. 2.2 0.087
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT101-1 REFERENCES IEC 051G02 JEDEC MO-015AD EIAJ EUROPEAN PROJECTION
ISSUE DATE 92-11-17 95-01-23
1997 Nov 25
20
Philips Semiconductors
Product specification
Voice switched speakerphone IC
TEA1095
SO24: plastic small outline package; 24 leads; body width 7.5 mm
SOT137-1
D
E
A X
c y HE vMA
Z 24 13
Q A2 A1 pin 1 index Lp L 1 e bp 12 wM detail X (A 3) A
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 2.65 0.10 A1 0.30 0.10 A2 2.45 2.25 A3 0.25 0.01 bp 0.49 0.36 c 0.32 0.23 D (1) 15.6 15.2 0.61 0.60 E (1) 7.6 7.4 0.30 0.29 e 1.27 0.050 HE 10.65 10.00 L 1.4 Lp 1.1 0.4 Q 1.1 1.0 0.043 0.039 v 0.25 0.01 w 0.25 0.01 y 0.1 0.004 Z
(1)
0.9 0.4 0.035 0.016
0.012 0.096 0.004 0.089
0.019 0.013 0.014 0.009
0.419 0.043 0.055 0.394 0.016
8o 0o
Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT137-1 REFERENCES IEC 075E05 JEDEC MS-013AD EIAJ EUROPEAN PROJECTION
ISSUE DATE 95-01-24 97-05-22
1997 Nov 25
21
Philips Semiconductors
Product specification
Voice switched speakerphone IC
TEA1095
SSOP24: plastic shrink small outline package; 24 leads; body width 5.3 mm
SOT340-1
D
E
A X
c y HE vMA
Z 24 13
Q A2 pin 1 index A1 (A 3) Lp L 1 e bp 12 wM detail X A
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 2.0 A1 0.21 0.05 A2 1.80 1.65 A3 0.25 bp 0.38 0.25 c 0.20 0.09 D (1) 8.4 8.0 E (1) 5.4 5.2 e 0.65 HE 7.9 7.6 L 1.25 Lp 1.03 0.63 Q 0.9 0.7 v 0.2 w 0.13 y 0.1 Z (1) 0.8 0.4 8 0o
o
Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION SOT340-1 REFERENCES IEC JEDEC MO-150AG EIAJ EUROPEAN PROJECTION
ISSUE DATE 93-09-08 95-02-04
1997 Nov 25
22
Philips Semiconductors
Product specification
Voice switched speakerphone IC
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). DIP SOLDERING BY DIPPING OR BY WAVE The maximum permissible temperature of the solder is 260 C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. REPAIRING SOLDERED JOINTS Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 C, contact may be up to 5 seconds. SO and SSOP REFLOW SOLDERING Reflow soldering techniques are suitable for all SO and SSOP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating
TEA1095
method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. WAVE SOLDERING Wave soldering is not recommended for SSOP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices. If wave soldering cannot be avoided, the following conditions must be observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow and must incorporate solder thieves at the downstream end. Even with these conditions, only consider wave soldering SSOP packages that have a body width of 4.4 mm, that is SSOP16 (SOT369-1) or SSOP20 (SOT266-1). During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. REPAIRING SOLDERED JOINTS Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
1997 Nov 25
23
Philips Semiconductors
Product specification
Voice switched speakerphone IC
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
TEA1095
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Nov 25
24
Philips Semiconductors
Product specification
Voice switched speakerphone IC
NOTES
TEA1095
1997 Nov 25
25
Philips Semiconductors
Product specification
Voice switched speakerphone IC
NOTES
TEA1095
1997 Nov 25
26
Philips Semiconductors
Product specification
Voice switched speakerphone IC
NOTES
TEA1095
1997 Nov 25
27
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA56
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
417027/1200/03/pp28
Date of release: 1997 Nov 25
Document order number:
9397 750 03122

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